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PTB20080 - 25 Watts/ 1.6-1.7 GHz RF Power Transistor

PTB20080 Description

e PTB 20080 25 Watts, 1.6 *1.7 GHz RF Power Transistor .
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.

PTB20080 Applications

* Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. • • • • • 25 Watts, 1.6
* 1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Typical

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Datasheet Details

Part number
PTB20080
Manufacturer
Ericsson
File Size
445.22 KB
Datasheet
PTB20080_Ericsson.pdf
Description
25 Watts/ 1.6-1.7 GHz RF Power Transistor

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Watts 1.6-1.7 GHz Power Transistor Ericsson
Ericsson PTB20080-like datasheet