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PTB20080 Datasheet - Ericsson

PTB20080 25 Watts/ 1.6-1.7 GHz RF Power Transistor

ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellen.

PTB20080_Ericsson.pdf

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Datasheet Details

Part number:

PTB20080

Manufacturer:

Ericsson

File Size:

445.22 KB

Description:

25 watts/ 1.6-1.7 ghz rf power transistor.

PTB20080 Distributor

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PTB20080 PTB20080 Watts 1.6-1.7 GHz Power Transistor Ericsson