PTB20080 Datasheet, Power Transistor, Ericsson

25 watts/ 1.6-1.7 ghz rf power transistor

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PTB20080

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Ericsson

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25 watts/ 1.6-1.7 ghz rf power transistor.
ThPTB 20080 iclass A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc op.

✔ PTB20080 Application

Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 1

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PTB20080 Watts 1.6-1.7 GHz Power Transistor Ericsson

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✔ PTB20080 Application

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