PTB20080 25 Watts/ 1.6-1.7 GHz RF Power Transistor

Ericsson

Description

e PTB 20080 25 Watts, 1.6 *1.7 GHz RF Power Transistor .
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.

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Datasheet Specifications

Part number: PTB20080
Manufacturer: Ericsson
File Size: 445.22 KB
Datasheet: PTB20080_Ericsson.pdf
Description: 25 Watts/ 1.6-1.7 GHz RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 1.6
* 1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated Typical

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PTB20080 Watts 1.6-1.7 GHz Power Transistor Ericsson

Ericsson PTB20080-like datasheet