FDC608PZ - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC608PZ
Manufacturer	Fairchild Semiconductor
File Size	173.16 KB
Description	N-Channel MOSFET
Datasheet	FDC608PZ_FairchildSemiconductor.pdf

FDC608PZ Product details

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

5.8 A,.
20 V. RDS(ON) = 30 mΩ @ VGS =.
4.5 V RDS(ON) = 43 mΩ @ VGS =.
2.5 V.
Low Gate Charge.
High performance trench technology for extremely low RDS(ON).
SuperSOT TM.
6 package: small footprint (72% smaller than standard SO.
8) low profile (1mm thick). D D S 1 2 6 5 4 SuperSOT TM -6 D D G www. DataSheet4U. com 3 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Sour.

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Published: May 3, 2007 |