FDC634P Datasheet, Mosfet, Fairchild Semiconductor

FDC634P Features

• Mosfet
• 
    –3.5 A,
    –20 V. RDS(ON) = 80 mΩ @ VGS =
    –4.5 V RDS(ON) = 110 mΩ @ VGS =
    –2.5 V
• Low gate charge (7.2 nC

PDF File Details

Part number:

FDC634P

Manufacturer:

Fairchild Semiconductor

File Size:

157.87kb

Download:

📄 Datasheet

Description:

P-channel mosfet. This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power manage

FDC634P Application

• Applications Applications
• Battery management
• Load switch
• Battery protection Features
• 
    –3.5

TAGS

FDC634P

Fairchild Semiconductor

📁 Related Datasheet

FDC634P - P-Channel MOSFET (ON Semiconductor)
MOSFET – P-Channel 2.5 V Specified POWERTRENCH) FDC634P General Description This P−Channel 2.5 V specified MOSFET uses onsemi’s low voltage POWERTRENC.

FDC6301N - Dual N-Channel / Digital FET (Fairchild Semiconductor)
July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pr.

FDC6301N - Dual N-Channel Digital FET (ON Semiconductor)
Dual, N-Channel, Digital FET FDC6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.

FDC6302P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
October 1997 FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are .

FDC6302P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6302P Digital FET, Dual P-Channel General Description These Dual P-Channel logic level enhancement mode field effect transistors are produced using.

FDC6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
August 1997 FDC6303N Digital FET, Dual N-Channel General Description These dual N-Channel logic level enhancement mode field effect transistors are p.

FDC6304P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairch.

FDC6304P - Dual P-Channel MOSFET (ON Semiconductor)
FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using ON Semiconductor'.

FDC6305N - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDC6305N March 1999 FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOS.

FDC6305N - Dual N-Channel MOSFET (ON Semiconductor)
MOSFET – Dual, N-Channel, POWERTRENCH) 2.5 V Specified FDC6305N General Description These N−Channel low threshold 2.5 V specified MOSFETs are produced.