FDC634P - P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FDC634P
Manufacturer	Fairchild Semiconductor
File Size	157.87 KB
Description	P-Channel MOSFET
Datasheet	FDC634P_FairchildSemiconductor.pdf

This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. Battery management Load switch Battery protection

3.5 A,.
20 V. RDS(ON) = 80 mΩ @ VGS =.
4.5 V RDS(ON) = 110 mΩ @ VGS =.
2.5 V.
Low gate charge (7.2 nC typical).
High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1a) PD Maximum Power Dissipation (Note 1a) (.

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Published: Mar 30, 2005 |