FDC637AN N-Channel MOSFET

Fairchild Semiconductor

Description

FDC637AN November 1999 FDC637AN Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET General .
This N-Channel 2.

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Datasheet Specifications

Part number: FDC637AN
Manufacturer: Fairchild Semiconductor
File Size: 240.68 KB
Datasheet: FDC637AN_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V
* Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller th

Applications

* DC/DC converter Load switch Battery Protection D D S 1 6 2 5 SuperSOT TM -6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25°C unless other

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FDC637AN N-Channel MOSFET Fairchild Semiconductor

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