FDC637AN - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC637AN
Manufacturer	Fairchild Semiconductor
File Size	240.68 KB
Description	N-Channel MOSFET
Datasheet	FDC637AN_FairchildSemiconductor.pdf

FDC637AN Product details

Description

This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V RDS(on) = 0.032 Ω @ VGS = 2.5 V.
Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Published: Mar 30, 2005 |