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FDC637BNZ - MOSFET

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FDC637BNZ Product details

Description

September 2007 tm Max rDS(on) = 24mΩ at VGS = 4.5V, ID = 6.2A Max rDS(on) = 32mΩ at VGS = 2.5V, ID = 5.2A Fast switching speed Low gate charge (8nC typical) High performance trench technology for extremely low rDS(on) SuperSOT™ 6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick) HBM ESD protection level > 2kV typical (Note 3) Manufactured using green packaging material

Features

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