FDC638APZ N-Channel MOSFET

Fairchild Semiconductor

Description

FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET December 2006 FDC638APZ P-Channel 2.5V PowerTrench® Specified MOSFET *20V, *.
This P-Channel 2.

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Datasheet Specifications

Part number: FDC638APZ
Manufacturer: Fairchild Semiconductor
File Size: 398.37 KB
Datasheet: FDC638APZ_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 43mΩ at VGS =
* 4.5V, ID =
* 4.5A
* Max rDS(on) = 68mΩ at VGS =
* 2.5V, ID =
* 3.8A
* Low gate charge (8nC typical).
* High performance trench technology for extremely low rDS(on).
* SuperSOTTM
* 6 package:sma

Applications

* load switching and power management,battery charging circuits,and DC/DC conversion. Application
* DC - DC Conversion S D D www. DataSheet4U. com D 1 2 3 3 6 D G D Pin 1 D D 5 4 D G S SuperSOTTM -6 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TST

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FDC638APZ N-Channel MOSFET Fairchild Semiconductor

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