FDC638APZ - N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC638APZ
Manufacturer	Fairchild Semiconductor
File Size	398.37 KB
Description	N-Channel MOSFET
Datasheet	FDC638APZ_FairchildSemiconductor.pdf

FDC638APZ Product details

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion. DC - DC Conversion S D D www.DataSheet4U.com D 1 2 3 3 6 D G D Pin 1 D D 5

Features

Max rDS(on) = 43mΩ at VGS =.
4.5V, ID =.
4.5A.
Max rDS(on) = 68mΩ at VGS =.
2.5V, ID =.
3.8A.
Low gate charge (8nC typical).
High performance trench technology for extremely low rDS(on).
SuperSOTTM.
6 package:small footprint (72% smaller than standard SO.
8) low profile (1mm thick).
RoHS Compliant General.

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Published: May 3, 2007 |