FDC638P - P-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDC638P
Manufacturer	Fairchild Semiconductor
File Size	240.77 KB
Description	P-Channel MOSFET
Datasheet	FDC638P_FairchildSemiconductor.pdf

FDC638P Product details

Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 pin 1 8 2 G D D 5 SuperSOT TM -6 3 4 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain-Source Voltage TA = 25°C unless ot.

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Published: Mar 30, 2005 |