FDC638P

P-Channel MOSFET

Fairchild Semiconductor

FDC638P Features

* -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM

FDC638P General Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power ap.

FDC638P Datasheet (240.77 KB)

FDC638P Datasheet Preview — Preview of FDC638P PDF

Datasheet Details

Part number:

FDC638P

Manufacturer:

Fairchild Semiconductor

File Size:

240.77 KB

Description:

P-channel mosfet.

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FDC638P P-Channel MOSFET Fairchild Semiconductor

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FDC638P Features

FDC638P General Description

Datasheet Details

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Description:

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