FDC638P Datasheet, Mosfet, Fairchild Semiconductor

FDC638P Features

• Mosfet -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). Sup

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FDC638P

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

P-channel mosfet. This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especial

FDC638P Application

• Applications load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. R DS(ON) = 0.045 R DS(

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FDC638P

Fairchild Semiconductor

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