FDC638P Datasheet - Fairchild Semiconductor

FDC638P P-Channel MOSFET

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power ap.

FDC638P Features

* -4.5 A, -20 V. R DS(ON) = 0.045 R DS(ON) = 0.065 Ω @ VGS = -4.5 V Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). TM SOT-23 SuperSOTTM

FDC638P Datasheet (240.77 KB)