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FDC6392S P-Channel MOSFET & Schottky Diode

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Description

FDC6392S April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General .
The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier r.

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Datasheet Specifications

Part number
FDC6392S
Manufacturer
Fairchild Semiconductor
File Size
193.94 KB
Datasheet
FDC6392S_FairchildSemiconductor.pdf
Description
P-Channel MOSFET & Schottky Diode

Features

* a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features MOSFET:
* 2.2 A,
* 20V. RDS(ON) = 150 mΩ @ VGS =
* 4.5V RDS(ON) = 200 mΩ @ VGS =

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