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FDD1600N10ALZ N-Channel MOSFET

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Description

FDD1600N10ALZ * N-Channel PowerTrench® MOSFET FDD1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 6.8 A, 160 m January 2014 .
This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resista.

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Features

* RDS(on) = 124 m (Typ. ) @ VGS = 10 V, ID = 3.4 A
* RDS(on) = 175 m (Typ. ) @ VGS = 5 V, ID = 2.1 A
* Low Gate Charge (Typ.2.78 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoHS C

FDD1600N10ALZ Distributors

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📌 All Tags

FDD1600N10ALZ N-Channel MOSFET Fairchild Semiconductor
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FDD1600N10ALZD
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