FDD1600N10ALZ Datasheet (Fairchild Semiconductor)

FDD1600N10ALZ, N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

Application * Consumer Appliances * LED TV and Monitor * Synchronous Rectific

FDD1600N10ALZ Features

* RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A

* RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A

* Low Gate Charge (Typ.2.78 nC)

* Low Crss (Typ. 2.04 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS C