Datasheet Details
Part number:
FDD1600N10ALZD
Manufacturer:
Fairchild Semiconductor
File Size:
807.64 KB
Description:
N-Channel MOSFET
Features
* RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A
* RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A
* Low Gate Charge (Typ. 2.78 nC)
* Low Crss (Typ. 2.04 pF)
* Fast Switching
* 100% Avalanche Tested
* Improved dv/dt Capability
* RoH
FDD1600N10ALZD-FairchildSemiconductor.pdf
FDD1600N10ALZD, N-Channel MOSFET
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.
A
FDD1600N10ALZD Distributor
📁 Related Datasheet
📌 All Tags
