FDD1600N10ALZD

N-Channel MOSFET

Fairchild Semiconductor

FDD1600N10ALZD Features

* RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A

* RDS(on) = 175 mΩ (Typ.) @ VGS = 5.0 V, ID = 2.1 A

* Low Gate Charge (Typ. 2.78 nC)

* Low Crss (Typ. 2.04 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoH

FDD1600N10ALZD General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. A.

FDD1600N10ALZD Datasheet (807.64 KB)

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FDD1600N10ALZD

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Fairchild Semiconductor

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807.64 KB

Description:

N-channel mosfet.
FDD1600N10ALZD

* BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench® MOSFET + Diod.

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FDD1600N10ALZD N-Channel MOSFET Fairchild Semiconductor

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FDD1600N10ALZD Features

FDD1600N10ALZD General Description

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