FDMC8651 N-Channel Power Trench MOSFET

Fairchild Semiconductor

Description

FDMC8651 N-Channel Power Trench® MOSFET July 2008 FDMC8651 N-Channel Power Trench® MOSFET 30 V, 20 A, 6.1 mΩ .
This device has been designed specifically to improve the efficiency of DC/DC converters.

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Datasheet Specifications

Part number: FDMC8651
Manufacturer: Fairchild Semiconductor
File Size: 320.83 KB
Datasheet: FDMC8651_FairchildSemiconductor.pdf
Description: N-Channel Power Trench MOSFET

Features

* Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A
* Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A
* Low Profile - 1 mm max in Power 33
* 100% UIL Tested

Applications

* Synchronous rectifier
* 3.3 V input synchronous buck switch Top Bottom S Pin 1 S S D G D D D D D D D 5 6 7 8 4 3 2 1 G S S S Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -

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FDMC8651 N-Channel Power Trench MOSFET Fairchild Semiconductor

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