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FDMC86570LET60 MOSFET

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Description

FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 m.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

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Features

* Extended TJ rating to 175°C
* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free

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