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FDMS3620S MOSFET

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Description

FDMS3620S PowerTrench® PowerStage July 2012 FDMS3620S PowerTrench® PowerStage 25V Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

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Features

* Q1: N-Channel
* Max rDS(on) = 4.7 mΩ at VGS = 10 V, ID = 17.5 A
* Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16 A Q2: N-Channel
* Max rDS(on) = 1.0 mΩ at VGS = 10 V, ID = 38 A
* Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 35 A
* Low inductance packaging shortens

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin

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