FDMS8820 Datasheet - Fairchild Semiconductor

FDMS8820 N-Channel PowerTrench MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diod.

FDMS8820 Features

* Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A

* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A

* Advanced Package and Silicon combination for low rDS(on) and high efficiency

* Next generation enhanced body diode technology, engineered for soft recovery

* MSL

FDMS8820-FairchildSemiconductor.pdf