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FDMS8820 N-Channel PowerTrench MOSFET

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Description

FDMS8820 N-Channel PowerTrench® MOSFET FDMS8820 N-Channel PowerTrench® MOSFET 30 V, 160 A, 2.0 mΩ .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using e.

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Datasheet Specifications

Part number
FDMS8820
Manufacturer
Fairchild Semiconductor
File Size
276.14 KB
Datasheet
FDMS8820-FairchildSemiconductor.pdf
Description
N-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered for soft recovery
* MSL

Applications

* VRM Vcore Switching For Desktop And Server
* OringFET / Load Switching
* DC-DC Conversion Pin 1 Top Bottom Pin 1 S S S G Power 56 D D DD S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain

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