FDP027N08B Datasheet - Fairchild Semiconductor

FDP027N08B N-Channel PowerTrench MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Battery Protec.

FDP027N08B Features

* RDS(on) = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A

* Low FOM RDS(on)

* QG

* Low Reverse-Recovery Charge, Qrr = 112 nC

* Soft Reverse-Recovery Body Diode

* Enables High Efficiency in Synchronous Rectification

* Fast Switching Speed

* 100%

FDP027N08B-FairchildSemiconductor.pdf

FDP027N08B Datasheet Preview — Preview of FDP027N08B PDF

Datasheet Details

Part number:

FDP027N08B

Manufacturer:

Fairchild Semiconductor

File Size:

638.74 KB

Description:

N-channel powertrench mosfet.

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FDP027N08B FDP027N08B N-Channel PowerTrench MOSFET Fairchild Semiconductor

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