FDP027N08B

The FDP027N08B is N-Channel PowerTrench MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDP027N08B
Manufacturer	Fairchild Semiconductor
File Size	638.74 KB
Description	N-Channel PowerTrench MOSFET
Datasheet	FDP027N08B-FairchildSemiconductor.pdf
Additional preview pages of the FDP027N08B datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol Parameter FDP027N08B_F102 VDSS VGSS ID I

Features

RDS(on) = 2.21 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A.
Low FOM RDS(on).
QG.
Low Reverse-Recovery Charge, Qrr = 112 nC.
Soft Reverse-Recovery Body Diode.
Enables High Efficiency in Synchronous Rectification.
Fast Switching Speed.
100% UIL Tested.
RoHS Compliant.

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Published: Oct 18, 2015 |