FDP027N08B N-Channel PowerTrench MOSFET

Fairchild Semiconductor

Description

FDP027N08B * N-Channel PowerTrench® MOSFET FDP027N08B N-Channel PowerTrench® MOSFET 80 V, 223 A, 2.7 mΩ November 2013 .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance whil.

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Datasheet Specifications

Part number: FDP027N08B
Manufacturer: Fairchild Semiconductor
File Size: 638.74 KB
Datasheet: FDP027N08B-FairchildSemiconductor.pdf
Description: N-Channel PowerTrench MOSFET

Features

* RDS(on) = 2.21 mΩ ( Typ. ) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on)
* QG
* Low Reverse-Recovery Charge, Qrr = 112 nC
* Soft Reverse-Recovery Body Diode
* Enables High Efficiency in Synchronous Rectification
* Fast Switching Speed
* 100%

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP027N08B_F102 VDSS VGSS ID IDM EAS dv

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FDP027N08B N-Channel PowerTrench MOSFET Fairchild Semiconductor

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