FDP060AN08A0
Fairchild Semiconductor
0.96MB
Mosfet.
TAGS
📁 Related Datasheet
FDP060AN08A0 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP060AN08A0
·FEATURES ·With TO-220 packaging ·Drain Source Voltage-
: VDSS ≥ 75V ·Static drain-source on-resistance.
FDP020N06B - N-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDP020N06B — N-Channel PowerTrench® MOSFET
FDP020N06B
N-Channel PowerTrench® MOSFET
60 V, 313 A, 2 mΩ
November 2013
Features
• RDS(on) = 1.65 mΩ ( .
FDP023N08B - MOSFET
(Fairchild Semiconductor)
FDP023N08B — N-Channel PowerTrench® MOSFET
FDP023N08B
N-Channel PowerTrench® MOSFET
75 V, 242 A, 2.35 mΩ
November 2013
Features
• RDS(on) = 1.96 mΩ.
FDP025N06 - MOSFET
(Fairchild Semiconductor)
FDP025N06 — N-Channel PowerTrench® MOSFET
FDP025N06
N-Channel PowerTrench® MOSFET
60 V, 265 A, 2.5 mΩ
November 2013
Features
• RDS(on) = 1.9 mΩ (Ty.
FDP027N08B - N-Channel MOSFET
(ON Semiconductor)
FDP027N08B — N-Channel PowerTrench® MOSFET
FDP027N08B
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
Features
• RDS(on) = 2.21 mΩ ( Typ.) @ VGS =.
FDP027N08B - N-Channel PowerTrench MOSFET
(Fairchild Semiconductor)
FDP027N08B — N-Channel PowerTrench® MOSFET
FDP027N08B
N-Channel PowerTrench® MOSFET
80 V, 223 A, 2.7 mΩ
November 2013
Features
• RDS(on) = 2.21 mΩ .
FDP030N06 - MOSFET
(Fairchild Semiconductor)
FDP030N06 — N-Channel PowerTrench® MOSFET
FDP030N06
N-Channel PowerTrench® MOSFET
60 V, 193 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.6 mΩ (Ty.
FDP030N06 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FDP030N06
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dri.
FDP030N06B_F102 - MOSFET
(Fairchild Semiconductor)
FDP030N06B_F102 — N-Channel PowerTrench® MOSFET
FDP030N06B_F102
N-Channel PowerTrench® MOSFET
60 V, 195 A, 3.1 mΩ
November 2013
Features
• RDS(on) .
FDP032N08 - MOSFET
(Fairchild Semiconductor)
FDP032N08 — N-Channel PowerTrench® MOSFET
FDP032N08
N-Channel PowerTrench® MOSFET
75 V, 235 A, 3.2 mΩ
November 2013
Features
• RDS(on) = 2.5 mΩ (Ty.