Datasheet4U Logo Datasheet4U.com

FDP090N10

MOSFET

FDP090N10 Features

* RDS(on) = 7.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low RDS(on)

* High Power and Current Handling Capability

* RoHS Compliant Description This N-Channel MOSFET i

FDP090N10 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications

* Synchronous Rectification for ATX / Server / Telecom PSU

* Batte.

FDP090N10 Datasheet (605.47 KB)

Preview of FDP090N10 PDF

Datasheet Details

Part number:

FDP090N10

Manufacturer:

Fairchild Semiconductor

File Size:

605.47 KB

Description:

Mosfet.

📁 Related Datasheet

FDP090N10 N-Channel MOSFET (INCHANGE)

FDP020N06B N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDP023N08B MOSFET (Fairchild Semiconductor)

FDP025N06 MOSFET (Fairchild Semiconductor)

FDP027N08B N-Channel MOSFET (ON Semiconductor)

FDP027N08B N-Channel PowerTrench MOSFET (Fairchild Semiconductor)

FDP030N06 MOSFET (Fairchild Semiconductor)

FDP030N06 N-Channel MOSFET (INCHANGE)

FDP030N06B_F102 MOSFET (Fairchild Semiconductor)

FDP032N08 MOSFET (Fairchild Semiconductor)

TAGS

FDP090N10 MOSFET Fairchild Semiconductor

Image Gallery

FDP090N10 Datasheet Preview Page 2 FDP090N10 Datasheet Preview Page 3

FDP090N10 Distributor