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FDS6673BZ P-Channel MOSFET

FDS6673BZ Description

www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Descri.
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-s.

FDS6673BZ Features

* Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
* Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A

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P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS6673BZ-like datasheet