FDS6679AZ Datasheet (Fairchild Semiconductor) - P-Channel PowerTrench MOSFET

FDS6679AZ, P-Channel PowerTrench MOSFET

This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac

FDS6679AZ Features

* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A

* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

* Extended VGS range (-25V) for battery applications

* HBM ESD protection level of 6kV typical (note 3)

* High performance trench technology for extremely low rDS(o