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FDS6679AZ P-Channel PowerTrench MOSFET

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Description

FDS6679AZ P-Channel PowerTrench® MOSFET FDS6679AZ P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ General .
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number
FDS6679AZ
Manufacturer
Fairchild Semiconductor
File Size
490.53 KB
Datasheet
FDS6679AZ-FairchildSemiconductor.pdf
Description
P-Channel PowerTrench MOSFET

Features

* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

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