FQB12N60 Datasheet - Fairchild Semiconductor

FQB12N60, 600V N-Channel MOSFET

FQB12N60 / FQI12N60 April 2000 QFET FQB12N60 / FQI12N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Details

Part number:

FQB12N60

Manufacturer:

Fairchild Semiconductor

File Size:

540.78 KB

Description:

600V N-Channel MOSFET

Features

* 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

FQB12N60 Distributors

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FQB12N60 600V N-Channel MOSFET Fairchild Semiconductor

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