FQB12N60 - 600V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i
FQB12N60 Features
* 10.5A, 600V, RDS(on) = 0.7 Ω @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !
