FQB12P20 Datasheet - Fairchild Semiconductor

FQB12P20 200V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB12P20 Features

* -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !

* G! G S ▶ ▲

* D2-PAK FQB Series G D S I2-PAK F

FQB12P20_FairchildSemiconductor.pdf