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FQB12P10

100V P-Channel MOSFET

FQB12P10 Features

* -11.5A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D G G S D2-PAK F

FQB12P10 General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB12P10 Datasheet (635.79 KB)

Preview of FQB12P10 PDF

Datasheet Details

Part number:

FQB12P10

Manufacturer:

Fairchild Semiconductor

File Size:

635.79 KB

Description:

100v p-channel mosfet.

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TAGS

FQB12P10 100V P-Channel MOSFET Fairchild Semiconductor

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