FQB12N50

500V N-Channel MOSFET

Fairchild Semiconductor

FQB12N50 Features

* 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V Low gate charge ( typical 39 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G! G S D2-PAK FQB Series G D S I2-PAK FQI

FQB12N50 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQB12N50 Datasheet (617.23 KB)

FQB12N50 Datasheet Preview — Preview of FQB12N50 PDF

Datasheet Details

Part number:

FQB12N50

Manufacturer:

Fairchild Semiconductor

File Size:

617.23 KB

Description:

500v n-channel mosfet.

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FQB12N50 500V N-Channel MOSFET Fairchild Semiconductor

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FQB12N50 Features

FQB12N50 General Description

Datasheet Details

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