HGT4E20N60A4DS Datasheet, Diode, Fairchild Semiconductor

HGT4E20N60A4DS Features

• Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGT4E20N60A4DS

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Fairchild Semiconductor

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📄 Datasheet

Description:

600v/ smps series n-channel igbt with anti-parallel hyperfast diode.

HGT4E20N60A4DS Application

• Applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mo

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