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HGT4E20N60A4DS

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT4E20N60A4DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used

HGT4E20N60A4DS Datasheet (204.32 KB)

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Datasheet Details

Part number:

HGT4E20N60A4DS

Manufacturer:

Fairchild Semiconductor

File Size:

204.32 KB

Description:

600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high .

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HGT4E20N60A4DS 600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Fairchild Semiconductor

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