* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used
HGT4E30N60B3DS Datasheet (214.44 KB)
HGT4E30N60B3DS
Fairchild Semiconductor
214.44 KB
60a/ 600v/ ufs series n-channel igbt.
HGTG30N60B3D, HGT4E30N60B3DS
Data Sheet December 2001
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60B3D, and H.
📁 Related Datasheet
HGT4E20N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild Semiconductor)
HGT1N30N60A4D 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild Semiconductor)
HGT1N40N60A4D N-Channel IGBT (Fairchild Semiconductor)
HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S10N120BNS N-Channel IGBT (Intersil Corporation)
HGT1S11N120CNS N-Channel IGBT (Fairchild Semiconductor)
HGT1S11N120CNS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS N-Channel IGBT (Intersil Corporation)
HGT1S12N60A4DS N-Channel IGBT (ON Semiconductor)
