Part number:
HGT4E30N60B3DS
Manufacturer:
Fairchild Semiconductor
File Size:
214.44 KB
Description:
60a/ 600v/ ufs series n-channel igbt.
HGT4E30N60B3DS Datasheet (214.44 KB)
Datasheet Details
HGT4E30N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used
HGT4E30N60B3DS Datasheet (214.44 KB)
Datasheet Details
HGT4E30N60B3DS
Fairchild Semiconductor
214.44 KB
60a/ 600v/ ufs series n-channel igbt.
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