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HGT4E30N60B3DS Datasheet - Fairchild Semiconductor

HGT4E30N60B3DS_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

HGT4E30N60B3DS

Manufacturer:

Fairchild Semiconductor

File Size:

214.44 KB

Description:

60a 600v ufs series n-channel igbt.

HGT4E30N60B3DS, 60A 600V UFS Series N-Channel IGBT

HGT4E30N60B3DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used

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