HGT4E30N60B3DS Datasheet, Igbt, Fairchild Semiconductor

HGT4E30N60B3DS Features

• Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGT4E30N60B3DS

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Fairchild Semiconductor

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📄 Datasheet

Description:

60a/ 600v/ ufs series n-channel igbt.

HGT4E30N60B3DS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGT4E30N60B3DS

Fairchild Semiconductor

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