Datasheet Specifications
- Part number
- HGT4E30N60B3DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 214.44 KB
- Datasheet
- HGT4E30N60B3DS_FairchildSemiconductor.pdf
- Description
- 60A 600V UFS Series N-Channel IGBT
Description
HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG30N60B3D, and H.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode usedApplications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49172. Packaging JEDEC STYLE TO-247 E C G TO-268AA C G E Ordering Information PART NUMBEHGT4E30N60B3DS Distributors
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