* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in a
HGTG30N60C3D Datasheet (144.62 KB)
HGTG30N60C3D
Fairchild Semiconductor
144.62 KB
N-channel igbt.
HGTG30N60C3D
Data Sheet December 2001
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high v.
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