* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP1N120BN Datasheet (97.60 KB)
HGTP1N120BN
Fairchild Semiconductor
97.60 KB
N-channel igbt.
HGTD1N120BNS, HGTP1N120BN
Data Sheet January 2001
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT).
📁 Related Datasheet
HGTP1N120BN N-Channel IGBT (Intersil Corporation)
HGTP1N120BND N-Channel IGBT (Intersil Corporation)
HGTP1N120CN N-Channel IGBT (Intersil Corporation)
HGTP1N120CND N-Channel IGBT (Intersil Corporation)
HGTP10N120BN N-Channel IGBT (Fairchild Semiconductor)
HGTP10N120BN N-Channel IGBT (Intersil Corporation)
HGTP10N40C1 N-Channel IGBT (Intersil Corporation)
HGTP10N40C1D N-Channel IGBT (Intersil Corporation)
HGTP10N40E1 N-Channel IGBT (Intersil Corporation)
HGTP10N40E1D N-Channel IGBT (Intersil Corporation)
