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FDB6021P 20V P-Channel MOSFET

FDB6021P Description

FDP6021P/FDB6021P April 2001 PRELIMINARY FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General .
This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process.

FDB6021P Features

* 28 A,
* 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V RDS(ON) = 40 mΩ @ VGS = 2.5 V RDS(ON) = 65 mΩ @ VGS = 1.8 V
* Critical DC electrical parameters specified at elevated temperature
* High performance trench technology for extremely low RDS(ON)
* 175°C maxim

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20V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDB6021P-like datasheet