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FDC610PZ - MOSFET

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FDC610PZ Product details

Description

August 2007 tm. Max rDS(on) = 42mΩ at VGS =. 10V, ID =. 4.9A. Max rDS(on) = 75mΩ at VGS =. 4.5V, ID =. 3.7A. Low gate charge (17nC typical).. High performance trench technology for extremely low rDS(on).. SuperSOTTM. 6 package: small footprint (72% smaller than standard SO. 8) low profile (1mm thick).. RoHS Compliant This P-Channel MOSF.

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MOSFET Fairchild Semiconductor
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