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FDC6301N Dual N-Channel / Digital FET

FDC6301N Description

July 1997 FDC6301N Dual N-Channel , Digital FET General .
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS techno.

FDC6301N Features

* 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V RDS(ON) = 4 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .301 SuperSOTTM-8 SO

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Datasheet Details

Part number
FDC6301N
Manufacturer
Fairchild Semiconductor
File Size
73.93 KB
Datasheet
FDC6301N_FairchildSemiconductor.pdf
Description
Dual N-Channel / Digital FET

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Dual N-Channel Digital FET Fairchild Semiconductor
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