Datasheet Details
- Part number
- FDG6321C
- Manufacturer
- Fairchild Semiconductor
- File Size
- 196.89 KB
- Datasheet
- FDG6321C_FairchildSemiconductor.pdf
- Description
- Dual N & P Channel Digital FET
FDG6321C Description
November 1998 FDG6321C Dual N & P Channel Digital FET General .
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS tec.
FDG6321C Features
* N-Ch 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5V. RDS(ON) = 0.60 Ω @ VGS= 2.7 V. P-Ch -0.41 A, -25 V,RDS(ON) = 1.1 Ω @ VGS= -4.5V. RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits(VGS(th) < 1.5 V). Gate-S
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