Datasheet Details
- Part number
- FDMC2610
- Manufacturer
- Fairchild Semiconductor
- File Size
- 389.96 KB
- Datasheet
- FDMC2610_FairchildSemiconductor.pdf
- Description
- N-Channel UltraFET Trench MOSFET
FDMC2610 Description
www.DataSheet4U.com FDMC2610 N-Channel UltraFET Trench® MOSFET September 2006 FDMC2610 N-Channel UltraFET Trench® MOSFET 200V, 9.5A, 200mΩ .
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.
FDMC2610 Applications
* Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A
* Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A
* Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
* RoHS Compliant
tm
Application
* DC - DC Conversion
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