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FDMS3600S - MOSFET

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FDMS3600S Product details

Description

Q1: N-Channel. Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A. Max rDS(on) = 8.1 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel. Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A. Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A. Low inductance packaging shortens rise/fall times, resulting in lower switching losses This device includes two specialized N-Channel MOSFETs in a dual PQFN package.The switch node has been internally connected to enable easy placeme.

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