FQB13N06 60V N-Channel MOSFET

Fairchild Semiconductor

FQB13N06 Description

FQB13N06 / FQI13N06 May 2001 QFET FQB13N06 / FQI13N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB13N06 Features

* 13A, 60V, RDS(on) = 0.135Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 15 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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Datasheet Details

Part number: FQB13N06
Manufacturer: Fairchild Semiconductor
File Size: 672.55 KB
Datasheet: FQB13N06_FairchildSemiconductor.pdf
Description: 60V N-Channel MOSFET

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60V N-Channel MOSFET Fairchild Semiconductor

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