FQB8N60C 600V N-Channel MOSFET

Fairchild Semiconductor

FQB8N60C Description

FQB8N60C / FQI8N60C FQB8N60C / FQI8N60C 600V N-Channel MOSFET QFET TM General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB8N60C Features

* 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
* Low gate charge ( typical 28 nC)
* Low Crss ( typical 12 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK FQB Series GDS I2-PAK FQI Series Absolute Maximum Ratings TC

📥 Download Datasheet

FQB8N60C Datasheet Preview — Preview of FQB8N60C PDF

Datasheet Details

Part number: FQB8N60C
Manufacturer: Fairchild Semiconductor
File Size: 644.54 KB
Datasheet: FQB8N60C_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor

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