FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET

Fairchild Semiconductor

FQD12N20LTM_F085 Description

FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQD12N20LTM_F085 Features

* 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V
* Low gate charge ( typical 16 nC)
* Low Crss ( typical 17 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Low level gate drive requirement allowing direct opration from logic

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FQD12N20LTM_F085 Datasheet Preview — Preview of FQD12N20LTM_F085 PDF

Datasheet Details

Part number: FQD12N20LTM_F085
Manufacturer: Fairchild Semiconductor
File Size: 639.88 KB
Datasheet: FQD12N20LTM_F085-FairchildSemiconductor.pdf
Description: 200V Logic Level N-Channel MOSFET

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200V Logic Level N-Channel MOSFET Fairchild Semiconductor

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