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FQI15P12 120V P-Channel MOSFET

FQI15P12 Description

FQB15P12 / FQI15P12 FQB15P12 / FQI15P12 120V P-Channel MOSFET QFET® General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI15P12 Features

* -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V
* Low gate charge ( typical 29 nC)
* Low Crss ( typical 110 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating D GS D2-PAK FQB Serie

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120V P-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI15P12-like datasheet