Datasheet Details
- Part number
- HGT4E20N60A4DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 204.32 KB
- Datasheet
- HGT4E20N60A4DS_FairchildSemiconductor.pdf
- Description
- 600V SMPS Series N-Channel IGBT
HGT4E20N60A4DS Description
HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high .HGT4E20N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used
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