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IRF610B - 200V N-Channel MOSFET

IRF610B Description

IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRF610B Features

* 3.3A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum

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Datasheet Details

Part number
IRF610B
Manufacturer
Fairchild Semiconductor
File Size
867.00 KB
Datasheet
IRF610B_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET

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200V N-Channel MOSFET Fairchild Semiconductor
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