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IRFR210B, IRFU210B 200V N-Channel MOSFET

IRFR210B Description

IRFR210B / IRFU210B November 2001 IRFR210B / IRFU210B 200V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

IRFR210B Features

* 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !
* ◀ ▲
* G S D-PAK IRFR Series I-PAK G D S IRFU Se

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRFR210B, IRFU210B
Manufacturer
Fairchild Semiconductor
File Size
655.26 KB
Datasheet
IRFU210B_FairchildSemiconductor.pdf
Description
200V N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFR210B, IRFU210B.
Please refer to the document for exact specifications by model.

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200V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor IRFR210B-like datasheet