FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

Filtronic Compound Semiconductors

Description

Preliminary Data Sheet * .
AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transisto.

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Datasheet Specifications

Part number: FPDA200V
Manufacturer: Filtronic Compound Semiconductors
File Size: 57.52 KB
Datasheet: FPDA200V_FiltronicCompoundSemiconductors.pdf
Description: HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz
* 12.5 dB Power Gain at 18 GHz
* 55% Power-Added Efficiency
* Source Vias to Backside Metallization FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS GATE BOND PAD DRAIN BOND PAD DIE SIZE: 15.6X13.2 mils (395x335

Applications

* The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and g

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FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS Filtronic Compound Semiconductors

Filtronic Compound Semiconductors FPDA200V-like datasheet