FPDA200V - HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

Filtronic Compound Semiconductors

FPDA200V Datasheet Preview — Preview of FPDA200V PDF

Datasheet Details

Part number	FPDA200V
Manufacturer	Filtronic Compound Semiconductors
File Size	57.52 KB
Description	HIGH PERFORMANCE PHEMT WITH SOURCE VIAS
Datasheet	FPDA200V_FiltronicCompoundSemiconductors.pdf

FPDA200V Product details

Description

AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate.

Features

S.
21 dBm Output Power at 1-dB Compression at 18 GHz.
12.5 dB Power Gain at 18 GHz.
55% Power-Added Efficiency.
Source Vias to Backside Metallization FPDA200V HIGH.

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Published: Apr 1, 2005 |