FPDA200V Datasheet, vias equivalent, Filtronic Compound Semiconductors

FPDA200V Features

• Vias
• 21 dBm Output Power at 1-dB Compression at 18 GHz
• 12.5 dB Power Gain at 18 GHz
• 55% Power-Added Efficiency
• Source Vias to Backside Metallization

PDF File Details

Part number:

FPDA200V

Manufacturer:

Filtronic Compound Semiconductors

File Size:

57.52kb

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📄 Datasheet

Description:

High performance phemt with source vias. AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron M

FPDA200V Application

• Applications The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor

TAGS

FPDA200V

Filtronic Compound Semiconductors

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