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FPDA200V

HIGH PERFORMANCE PHEMT WITH SOURCE VIAS

FPDA200V Features

* 21 dBm Output Power at 1-dB Compression at 18 GHz

* 12.5 dB Power Gain at 18 GHz

* 55% Power-Added Efficiency

* Source Vias to Backside Metallization FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS GATE BOND PAD DRAIN BOND PAD DIE SIZE: 15.6X13.2 mils (395x335

FPDA200V General Description

AND APPLICATIONS The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic .

FPDA200V Datasheet (57.52 KB)

Preview of FPDA200V PDF

Datasheet Details

Part number:

FPDA200V

Manufacturer:

Filtronic Compound Semiconductors

File Size:

57.52 KB

Description:

High performance phemt with source vias.

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FPDA200V HIGH PERFORMANCE PHEMT WITH SOURCE VIAS Filtronic Compound Semiconductors

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