MRF6S27015NR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev.0, 8/2006 RF Power Field Effect Transistors N - Chann.
100 nF Chip Capacitor 4.

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Datasheet Specifications

Part number: MRF6S27015NR1
Manufacturer: Freescale Semiconductor
File Size: 623.87 KB
Datasheet: MRF6S27015NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta

Applications

* with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
* Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg. , Full Frequency Band, Channel Bandwidth = 3.84 MHz, PA

MRF6S27015NR1 Distributors

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MRF6S27015NR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S27015NR1-like datasheet