MRF6S27085HSR3, MRF6S27085HR3 Datasheet (Freescale Semiconductor) - N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S27085HSR3, MRF6S27085HR3, N-Channel Enhancement-Mode Lateral MOSFETs

Part Number 2508051107Y0 2743019447 100B4R7CP500X 100B3R6CP500X GRM55DR61H106KA88B C1825C225J5RAC MVK50VC47RM8X10TP NACZF331M63V C1825C103J1RAC ECS - T1ED226R T491D476K016AS L0603150GGW ERJ - 14YJ3R3U Manufacturer Fair - Rite Fair - Rite ATC ATC Murata Kemet Nippon Nippon Kemet Panasonic TE Series K

Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev.

1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s .

To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.

Typical Single - Carrier N - CDMA Performance: VDD = 28 Vol

MRF6S27085HSR3 Features

* f = 2645 MHz 100 5 100 Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S27085HR3 MRF6S27085HSR3 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS X AMPS2) 108 107 106 90 100 110 120 130 140