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MRF6S27085HSR3, MRF6S27085HR3 N-Channel Enhancement-Mode Lateral MOSFETs

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Description

Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev.1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode.
Part Number 2508051107Y0 2743019447 100B4R7CP500X 100B3R6CP500X GRM55DR61H106KA88B C1825C225J5RAC MVK50VC47RM8X10TP NACZF331M63V C1825C103J1RAC ECS -.

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This datasheet PDF includes multiple part numbers: MRF6S27085HSR3, MRF6S27085HR3. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MRF6S27085HSR3, MRF6S27085HR3
Manufacturer
Freescale Semiconductor
File Size
358.96 KB
Datasheet
MRF6S27085HR3_FreescaleSemiconductor.pdf
Description
N-Channel Enhancement-Mode Lateral MOSFETs
Note
This datasheet PDF includes multiple part numbers: MRF6S27085HSR3, MRF6S27085HR3.
Please refer to the document for exact specifications by model.

Features

* f = 2645 MHz 100 5 100 Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S27085HR3 MRF6S27085HSR3 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF FACTOR (HOURS X AMPS2) 108 107 106 90 100 110 120 130 140

Applications

* with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications.
* Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 900

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