MRF6S27050HR3 Datasheet - Freescale Semiconductor

MRF6S27050HR3 RF Power Field Effect Transistors

Part Number 2508051107Y0 2743019447 ATC100B4R3BT500XT ATC100B3R6BT500XT C1825C225J5RAC C1825C103J1RAC T491D226K025AT T491D476K016AT T491D106K050AT GRM32RR71H105KA01B EMVY630GTR331MMH0S EMVK500ADA470MHA0G CRCW12062R7FKEA Manufacturer Fair - Rite Fair - Rite ATC ATC Kemet Kemet Kemet Kemet Kemet Murat.

Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2500 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 7 Watts Avg., f = 2615 MHz, Channel.

MRF6S27050HR3 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* Designed for Lower Memory Effects and Wide Instantaneous Bandwidth App

MRF6S27050HR3_FreescaleSemiconductor.pdf