MRF6S20010GNR1, MRF6S20010NR1 RF Power Field Effect Transistors

Freescale Semiconductor

MRF6S20010GNR1 Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev.1, 5/2006 RF Power Field Effect Transistors N - Chann.
100 nF Chip Capacitor (1206) 4.

MRF6S20010GNR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta

MRF6S20010GNR1 Applications

* with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
* Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain
* 15.5 dB Drain Efficiency
* 36% IMD

📥 Download Datasheet

MRF6S20010GNR1 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF6S20010GNR1, MRF6S20010NR1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: MRF6S20010GNR1, MRF6S20010NR1
Manufacturer: Freescale Semiconductor
File Size: 627.46 KB
Datasheet: MRF6S20010NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors
Note: This datasheet PDF includes multiple part numbers: MRF6S20010GNR1, MRF6S20010NR1.
Please refer to the document for exact specifications by model.

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