* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta
MRF6S20010GNR1 Datasheet (627.46 KB)
MRF6S20010GNR1
Freescale Semiconductor
627.46 KB
Rf power field effect transistors.
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Freescale Semiconductor Technical Data
Document Number: MRF6S20010N Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Chann.
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