MRF6S20010GNR1 Datasheet - Freescale Semiconductor

MRF6S20010GNR1 RF Power Field Effect Transistors

100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D1.

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications. Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain 15.

MRF6S20010GNR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 200°C Capable Plastic Package

* RoHS Compliant

* In Ta

MRF6S20010GNR1 Datasheet (627.46 KB)

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Datasheet Details

Part number:

MRF6S20010GNR1

Manufacturer:

Freescale Semiconductor

File Size:

627.46 KB

Description:

Rf power field effect transistors.

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MRF6S20010GNR1 Power Field Effect Transistors Freescale Semiconductor

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