MRF6S20010NR1_FreescaleSemiconductor.pdf
Datasheet Details
Part number:
MRF6S20010GNR1, MRF6S20010NR1
Manufacturer:
Freescale Semiconductor
File Size:
627.46 KB
Description:
Rf power field effect transistors.
Note:
This datasheet PDF includes multiple part numbers: MRF6S20010GNR1, MRF6S20010NR1.
Please refer to the document for exact specifications by model.
MRF6S20010GNR1, MRF6S20010NR1, RF Power Field Effect Transistors
100 nF Chip Capacitor (1206) 4.7 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ Chip Resistor (1206) 10 kΩ Chip Resistor (1206) 10 Ω Chip Resistor (1206) Part Number CDR33BX104AKWS 600B4R7CW 600B9R1CW GRM55DR61H106KA88B T490D1
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev.
1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz.
Suitable for analog and digital modulation and multipurpose amplifier applications.
Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain 15
MRF6S20010GNR1 Features
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta
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