MRF6S20010NR1 RF Power Field Effect Transistors

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S20010N Rev.1, 5/2006 RF Power Field Effect Transistors N - Chann.
100 nF Chip Capacitor (1206) 4.

📥 Download Datasheet

MRF6S20010NR1 Datasheet Preview — Preview of MRF6S20010NR1 PDF

Datasheet Specifications

Part number: MRF6S20010NR1
Manufacturer: Freescale Semiconductor
File Size: 627.46 KB
Datasheet: MRF6S20010NR1_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 200°C Capable Plastic Package
* RoHS Compliant
* In Ta

Applications

* with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation and multipurpose amplifier applications.
* Typical Two - Tone Performance @ 2170 MHz: VDD = 28 Volts, IDQ = 130 mA, Pout = 10 Watts PEP Power Gain
* 15.5 dB Drain Efficiency
* 36% IMD

MRF6S20010NR1 Distributors

📁 Related Datasheet

MRF6S21140HR3 MRF6S21140HSR3 MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1

📌 All Tags

MRF6S20010NR1 Power Field Effect Transistors Freescale Semiconductor

Freescale Semiconductor MRF6S20010NR1-like datasheet