Datasheet Specifications
- Part number
- MRFG35010ANT1
- Manufacturer
- Freescale Semiconductor
- File Size
- 275.91 KB
- Datasheet
- MRFG35010ANT1_FreescaleSemiconductor.pdf
- Description
- RF Power Field Effect Transistor
Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev.0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect.Features
* .796 0.797 0.796 0.796 0.796 0.796 0.794 S22 ∠φ - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.Applications
* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.MRFG35010ANT1 Distributors
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