MRFG35010ANT1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MRFG35010ANT1, RF Power Field Effect Transistor

0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.5 pF Chip Capacitor 6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K pF Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resistor Part Number 08051J0R5BBT

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev.

0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.

Characterized from 500 to 5000 MHz.

Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MH

MRFG35010ANT1 Features

* .796 0.797 0.796 0.796 0.796 0.796 0.794 S22 ∠φ - 179.31 179.94 179.35 178.72 178.05 177.37 176.66 175.92 175.15 174.36 173.56 172.68 171.84 171.00 170.10 169.21 168.37 167.37 166.48 165.70 164.78 162.67 162.09 161.