Datasheet Specifications
- Part number
- MRFG35010AR1
- Manufacturer
- Freescale Semiconductor
- File Size
- 445.79 KB
- Datasheet
- MRFG35010AR1_FreescaleSemiconductor.pdf
- Description
- Gallium Arsenide PHEMT RF Power Field Effect Transistor
Description
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev.1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect .Features
* VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75Applications
* Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.MRFG35010AR1 Distributors
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