* VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75
MRFG35010AR1 Datasheet (445.79 KB)
MRFG35010AR1
Freescale Semiconductor
445.79 KB
Gallium arsenide phemt rf power field effect transistor.
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Freescale Semiconductor Technical Data
Document Number: MRFG35010A Rev. 1, 6/2006
Gallium Arsenide PHEMT
RF Power Field Effect .
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