MRFG35010AR1 Datasheet PDF (Gallium Arsenide PHEMT RF Power Field Effect Transistor) | Download Freescale Semiconductor MRFG35010AR1

MRFG35010AR1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Description

6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resistors Part Number 100A6R81BW150XT 100A100JW150XT 100A101JW150XT 100B101JW500XT 100B102JW500XT 200B10

Features

VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75.

Datasheet Details

Part number	MRFG35010AR1
Manufacturer	Freescale Semiconductor
File Size	445.79 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35010AR1 Datasheet
Additional preview pages of the MRFG35010AR1 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain —10 dB Drain Efficiency — 25% ACPR @ 5 MHz Offset — - 43 dBc in 3.

Published: Dec 4, 2006 |