* Supports up to 28 MHz Bandwidth OFDM Signals
* Internally Input Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Excellent Thermal Stability
* RoHS Compliant
* In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRFG35020AR1 Datasheet (488.93 KB)
MRFG35020AR1
Freescale Semiconductor
488.93 KB
Gallium arsenide phemt rf power field effect transistor.
Freescale Semiconductor Technical Data
Document Number: MRFG35020A Rev. 0, 1/2008
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Gallium Arsenide PHEMT
RF Power Field Effect T.
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