MRF19090R3 RF Power Field Effect Transistors

Freescale Semiconductor

MRF19090R3 Description

Freescale Semiconductor Technical Data Document Number: MRF19090 Rev.6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode La.

MRF19090R3 Features

* Internally Matched for Ease of Use
* High Gain, High Efficiency and High Linearity
* Integrated ESD Protection
* Designed for Maximum Gain and Insertion Phase Flatness
* Excellent Thermal Stability
* Characterized with Series Equivalent Large - Signa

MRF19090R3 Applications

* with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. www. datasheet4u. com
* Typical CDMA Performance: 1990 MHz, 26 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power
* 9 Watts Avg. Power Gain

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Datasheet Details

Part number: MRF19090R3
Manufacturer: Freescale Semiconductor
File Size: 382.82 KB
Datasheet: MRF19090R3_FreescaleSemiconductor.pdf
Description: RF Power Field Effect Transistors

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Power Field Effect Transistors Freescale Semiconductor

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